Surface bonding state of germanium via cyclic dry treatments using plasma of hydrogen iodine and pure oxygen gases

Abstract The effect of HI and O2 plasma treatments on Ge surface is studied by X-ray photoelectron spectroscopy. oxide can be effectively removed at room temperature remote in inductively coupled reactive ion etching system without substrate bias. re-oxidation oxide-free plasma-treated has been performed sequentially plasma. By utilizing treatment cyclically, we have proved the viability digital dry etching. controlling power processing time will building block for achieving atomic layer